The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Mar. 28, 2012
Po-yi Kuo, Pingtung County, TW;
Tien-sheng Chao, Hsinchu, TW;
Yi-hsien LU, Yunlin County, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
The present invention discloses a manufacturing method of a semiconductor component with a nanowire channel. The method comprises the following steps. The step of forming a stack structure on a substrate is performed. A semiconductor layer is formed on the substrate and the stack structure and further filled into the fillister. The semiconductor layer is patterned to form a source area and a drain area, and the channel region is located between the source area and the drain area. The semiconductor layer located outside the source area, the drain area and the fillister will be removed. And then, the stack structure is then removed. Therefore, the semiconductor layer filled inside the fillister will be exposed to be as a channel. A gate oxide layer is formed to cover the channel, and a gate layer is then formed on the gate oxide layer.