The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Jan. 23, 2012
Keiichi Matsushita, Kawasaki, JP;
Keiichi Matsushita, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a substrate; a nitride based compound semiconductor layer placed on the substrate; an active area which is placed on the nitride based compound semiconductor layer, and is composed of an aluminum gallium nitride layer (AlGaN) (where 0.1<=x<=1); an isolation region which performs isolation of the active area mutually; a gate electrode, a source electrode, and a drain electrode which have been placed on the active area surrounded by the isolation region; and a trench region formed by etching for a part of the active area under the gate electrode. The semiconductor device is highly reliable, high performance and high power and a fabrication method for the same is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile