The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Nov. 22, 2011
Chi-hsiung Chang, Hukou Township, Hsinchu County, TW;
Kuan-lun Chang, Hukou Township, Hsinchu County, TW;
Hung-yi Chang, Hukou Township, Hsinchu County, TW;
Yi-min Pan, Hukou Township, Hsinchu County, TW;
Jun-min Wu, Hukou Township, Hsinchu County, TW;
Ying-yen Chiu, Hukou Township, Hsinchu County, TW;
Chi-Hsiung Chang, Hukou Township, Hsinchu County, TW;
Kuan-Lun Chang, Hukou Township, Hsinchu County, TW;
Hung-Yi Chang, Hukou Township, Hsinchu County, TW;
Yi-Min Pan, Hukou Township, Hsinchu County, TW;
Jun-Min Wu, Hukou Township, Hsinchu County, TW;
Ying-Yen Chiu, Hukou Township, Hsinchu County, TW;
Big Sun Energy Technology Incorporation, Hsinchu County, TW;
Abstract
A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile