The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Jun. 29, 2010
Hiroyuki Miyamoto, Tokyo, JP;
Hiroyuki Miyamoto, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device, includes: a first resist film formation process of forming a first resist film on a processing target surface using a positive-type photoresist material; a first resist pattern formation process of forming a first resist pattern by performing development after exposure in which light is irradiated onto the first resist film; a second resist film formation process of forming a second resist film on the processing target surface, where the first resist pattern is formed, using a photoresist material; and a second resist pattern formation process of forming a second resist pattern by performing exposure in which light is irradiated onto the second resist film and then performing development. The method further includes an insolubilization process for insolubilizing the first resist pattern against a developer and a solvent of a photoresist material used in the second resist pattern formation process.