The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Apr. 19, 2010
Ryoung-han Kim, San Jose, CA (US);
Jong-wook Kye, Pleasanton, CA (US);
Ryoung-Han Kim, San Jose, CA (US);
Jong-wook Kye, Pleasanton, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Ultrafine patterns with dimensions smaller than the chemical and optical limits of lithography are formed by superimposing two photoresist patterns using a double exposure technique. Embodiments include forming a first resist pattern over a target layer to be patterned, forming a protective cover layer over the first resist pattern, forming a second resist pattern on the cover layer superimposed over the first resist pattern while the cover layer protects the first resist pattern, selectively etching the cover layer with high selectivity with respect to the first and second resist patterns leaving an ultrafine target pattern defined by the first and second resist patterns, and etching the underlying target layer using the superimposed first and second resist patterns as a mask.