The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Feb. 25, 2011
Tomoyuki Oki, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Hideki Watanabe, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Tomoyuki Oki, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Hideki Watanabe, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Tohoku University, Miyagi, JP;
Abstract
Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×10cmor more and 1×10cmor less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.