The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2013

Filed:

Jun. 29, 2011
Applicants:

Toru Matsushita, Kanagawa, JP;

Ken Matsubara, Kanagawa, JP;

Takashi Iwase, Kanagawa, JP;

Hidenori Mitani, Kanagawa, JP;

Jun Setogawa, Kanagawa, JP;

Fumiko Yamada, Kanagawa, JP;

Inventors:

Toru Matsushita, Kanagawa, JP;

Ken Matsubara, Kanagawa, JP;

Takashi Iwase, Kanagawa, JP;

Hidenori Mitani, Kanagawa, JP;

Jun Setogawa, Kanagawa, JP;

Fumiko Yamada, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

Operational stability of the nonvolatile memory in plural power supply voltage modes set up in advance corresponding to the power supply voltage level is realized. A nonvolatile memory is configured with a memory array, a charge pump, a distributor for selecting an output voltage of the charge pump, and a sequencer for controlling operation of the charge pump and the distributor. The nonvolatile memory is also provided with an analyzer which notifies the sequencer of a power supply voltage mode selectively specified among plural power supply voltage modes set up in advance corresponding to power supply voltage levels, and which detects mismatch between the power supply voltage mode notified to the sequencer and an actually supplied power supply voltage and limits the operation of the charge pump and the distributor with the use of the sequencer, based on the detection result. An operational stability of the nonvolatile memory is realized.


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