The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8441854 B1

PDF
Full Text
Expired
Date of Patent:
May. 14, 2013

Filed:

Dec. 14, 2010
Applicants:

Eui Sang Yoon, Ichon-si, KR;

Young Soo Park, Ichon-si, KR;

Jae Yun Kim, Ichon-si, KR;

Inventors:

Eui Sang Yoon, Ichon-si, KR;

Young Soo Park, Ichon-si, KR;

Jae Yun Kim, Ichon-si, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/06 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various exemplary embodiments of a nonvolatile memory apparatus are disclosed. In one exemplary embodiment, the memory apparatus may include: a page buffer; an even bit line connected to the page buffer; an odd bit line connected to the page buffer; an even memory cell string installed on the even bit line; an odd memory cell string installed on the odd bit line; and a bit line select unit configured to selectively generate a signal read path between the even bit line and the even memory cell string or between the odd bit line and the odd memory cell string.


Find Patent Forward Citations

Yoon, Eui. (2013). Nonvolatile memory apparatus capable of reducing current consumption and related driving method (U.S. Patent No. 8441854). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8441854

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