The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Mar. 16, 2010
Applicants:
Mitsuaki Oya, Aichi, JP;
Toshiya Yokogawa, Nara, JP;
Atsushi Yamada, Osaka, JP;
Akihiro Isozaki, Osaka, JP;
Inventors:
Mitsuaki Oya, Aichi, JP;
Toshiya Yokogawa, Nara, JP;
Atsushi Yamada, Osaka, JP;
Akihiro Isozaki, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride-based semiconductor light-emitting deviceincludes: a GaN substratewith an m-plane surface; a semiconductor multilayer structureprovided on the m-plane surfaceof the GaN substrate; and an electrodeprovided on the semiconductor multilayer structure. The electrodeincludes a Zn layerand a metal layerprovided on the Zn layer. The Zn layeris in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure