The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2013

Filed:

Dec. 09, 2010
Applicants:

Gregory Scott Zeman, Waukesha, WI (US);

Jeffrey Kautzer, Waukesha, WI (US);

Faisal Saeed, Waukesha, WI (US);

Inventors:

Gregory Scott Zeman, Waukesha, WI (US);

Jeffrey Kautzer, Waukesha, WI (US);

Faisal Saeed, Waukesha, WI (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photodiode assembly includes a semiconductor substrate, a photodiode cell, a ground diffusion region, and a guard band. The photodiode cell includes a first volume of the substrate doped with a first type of dopant. The diffusion region includes a second volume of the substrate that is doped with a second, opposite type of dopant. The guard band is disposed in the substrate and at least partially extends around an outer periphery of the photodiode cell. The guard band includes a third volume of the substrate that is doped with the first type of dopant. At least one of the ground diffusion region or the guard band is conductively coupled with a ground reference to conduct one or more of electrons or holes that drift from the photodiode cell through the substrate. The guard band is disposed closer to the photodiode cell than the ground diffusion region.


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