The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2013

Filed:

Sep. 29, 2009
Applicants:

Takeki Ninomiya, Osaka, JP;

Koji Arita, Osaka, JP;

Takumi Mikawa, Shiga, JP;

Satoru Fujii, Osaka, JP;

Inventors:

Takeki Ninomiya, Osaka, JP;

Koji Arita, Osaka, JP;

Takumi Mikawa, Shiga, JP;

Satoru Fujii, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory element includes a first electrode () formed on a substrate (), a resistance variable layer () and a second electrode (), wherein the resistance variable layer has a multi-layer structure including at least three layers which are a first transition metal oxide layer (), a second transition metal oxide layer () which is higher in oxygen concentration than the first transition metal oxide layer (), and a transition metal oxynitride layer (). The second transition metal oxide layer () is in contact with either one of the first electrode () and the second electrode (). The transition metal oxynitride layer () is provided between the first transition metal oxide layer () and the second transition metal oxide layer ().


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