The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Sep. 12, 2008
Joseph E. Ervin, Spring Grove, IL (US);
Trevor John Thornton, Fountain Hills, AZ (US);
Joseph E. Ervin, Spring Grove, IL (US);
Trevor John Thornton, Fountain Hills, AZ (US);
Arizona Board of Regents for and on behalf of Arizona State University, Scottsdale, AZ (US);
Abstract
The present invention provides a horizontally depleted Metal Semiconductor Field Effect Transistor (MESFET). A drain region, a source region, and a channel region are formed in the device layer such that the drain region and the source region are spaced apart from one another and the channel region extends between the drain region and the source region. First and second gate contacts are formed in the device layer on either side of the channel region, and as such, the first and second gate contacts will also reside between opposing portions of the source and drain regions. With this configuration, voltages applied to the first and second gate contacts effectively control vertical depletion regions, which form on either side of the channel region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile