The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Mar. 31, 2010
Hirotaka Geka, Tokyo, JP;
Hirotaka Geka, Tokyo, JP;
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Abstract
An objective is to provide a semiconductor device capable of utilizing properties of a high-mobility electron transport layer with a thin film stacked structure having large ΔEc, high electron mobility, and simplified element fabrication process even when the substrate material and the electron transport layer greatly differ in lattice constant. The semiconductor device includes: a semiconductor substrate (); a first barrier layer () on the substrate (); an electron transport layer () on the first barrier layer (); and a second barrier layer () on the electron transport layer (). The first barrier layer () has an InAlAs layer. At least one of the first barrier layer () and the second barrier layer () has a stacked structure having an AlGaAsSblayer in contact with the electron transport layer () and an InAlAs layer in contact with the AlGaAsSblayer. The stacked structure is doped with a donor impurity.