The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Mar. 15, 2007
Yoshio Shimoida, Yokosuka, JP;
Tetsuya Hayashi, Yokosuka, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Masakatsu Hoshi, Yokohama, JP;
Yoshio Shimoida, Yokosuka, JP;
Tetsuya Hayashi, Yokosuka, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Masakatsu Hoshi, Yokohama, JP;
Nissan Motor Co., Ltd., Yokohama-shi, Kanagawa, JP;
Abstract
A trench is formed extending from a surface of a hetero semiconductor region of a polycrystal silicon to the drain region. Further, a driving point of the field effect transistor, where a gate insulating film, the hetero semiconductor region and the drain region are adjoined, is formed at a position spaced apart from a side wall of the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile