The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Apr. 17, 2012
Applicants:
Tae-jong Han, Jeonju-si Jeonbuk, KR;
Daewoong Kim, Hwaseong-si, KR;
Kyung-tae Jang, Seoul, KR;
Bongcheol Kim, Seoul, KR;
Ohchel Kwon, Hwaseong-si, KR;
Inventors:
Tae-Jong Han, Jeonju-si Jeonbuk, KR;
Daewoong Kim, Hwaseong-si, KR;
Kyung-Tae Jang, Seoul, KR;
Bongcheol Kim, Seoul, KR;
Ohchel Kwon, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming vertical nonvolatile memory devices utilize carbon-blocking sacrificial capping layers to increase device yield by reducing the likelihood that one or more vertically-stacked layers of materials will lift-off during fabrication. These capping layers may be provided to cover carbon-containing sacrificial layers that are highly polymerized.