The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Mar. 05, 2010
Dong-chul Yoo, Seongnam-si, KR;
Eun-ha Lee, Seoul, KR;
Hyung-ik Lee, Suwon-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Sung Heo, Suwon-si, KR;
Han-mei Choi, Seoul, KR;
Yong-koo Kyoung, Seoul, KR;
Byong-ju Kim, Suwon-si, KR;
Dong-Chul Yoo, Seongnam-si, KR;
Eun-Ha Lee, Seoul, KR;
Hyung-Ik Lee, Suwon-si, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Sung Heo, Suwon-si, KR;
Han-Mei Choi, Seoul, KR;
Yong-Koo Kyoung, Seoul, KR;
Byong-Ju Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer.