The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jun. 08, 2010
Yutaka Higo, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.