The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Nov. 09, 2010
Applicants:

Michel Marty, Saint Paul de Varces, FR;

François Leverd, Saint Ismier, FR;

Inventors:

Michel Marty, Saint Paul de Varces, FR;

François Leverd, Saint Ismier, FR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a back-side illuminated image sensor, including the steps of: forming, inside and on top of an SOI-type silicon layer, components for trapping and transferring photogenerated carriers and isolation regions; forming a stack of interconnection levels on the silicon layer and attaching, on the interconnect stack, a semiconductor handle; removing the semiconductor support; forming, in the insulating layer and the silicon layer, trenches reaching the isolation regions; depositing a doped amorphous silicon layer, more heavily doped than the silicon layer, at least on the walls and the bottom of the trenches and having the amorphous silicon layer crystallize; and filling the trenches with a reflective material.


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