The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jan. 21, 2011
Kazuhiko Sanada, Kanagawa, JP;
Kazuhiko Sanada, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device contains a first transistor including a single trench which is formed on a substrate between a source region and a drain region and a gate electrode which is formed in the single trench, a second transistor including at least two trenches which are formed on the substrate between a source region and a drain region and a gate electrode which is formed in the at least two trenches, and also contains a device isolation insulating which isolates the region in which the transistor is formed. The first transistor has first distance between the single trench and the device isolation insulating film and the second transistor has second distance between the adjoining trenches, such the first distance is less than the second distance in a gate width direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile