The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Jun. 28, 2010
Applicants:

Yoon Moon Park, Seoul, KR;

Jae Hwang Sim, Seoul, KR;

Keon Soo Kim, Hwaseong-si, KR;

Inventors:

Yoon Moon Park, Seoul, KR;

Jae Hwang Sim, Seoul, KR;

Keon Soo Kim, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pattern structure for a semiconductor device includes a plurality of first patterns, each of the first patterns extending in a first direction in the shape of a line, neighboring first patterns being spaced apart from each other by a gap distance, the plurality of first patterns including a plurality of trenches in parallel with the line shapes, respective trenches being between neighboring first patterns, the plurality of trenches including long trenches and short trenches alternately arranged in a second direction substantially perpendicular to the first direction, and at least a second pattern, the second pattern being coplanar with the first pattern, end portions of the first patterns being connected to the second pattern.


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