The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8436399 B1

PDF
Full Text
Expired
Date of Patent:
May. 07, 2013

Filed:

Feb. 22, 2010
Applicants:

Kazushi Nakazawa, Toyama, JP;

Akiyoshi Tamura, Osaka, JP;

Inventors:

Kazushi Nakazawa, Toyama, JP;

Akiyoshi Tamura, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three layers; a heterojunction bipolar transistor formed in a region of the nitride semiconductor layer; and a field-effect transistor formed in a region of the nitride semiconductor layer, the region being different from the region in which the heterojunction bipolar transistor is formed.


Find Patent Forward Citations

Nakazawa, Kazushi. (2013). Semiconductor device (U.S. Patent No. 8436399). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8436399

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