The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Feb. 27, 2012
David Todd Emerson, Durham, NC (US);
Kevin Haberern, Cary, NC (US);
Michael John Bergmann, Chapel Hill, NC (US);
David B. Slater, Jr., Raleigh, NC (US);
Matthew Donofrio, Raleigh, NC (US);
John Edmond, Durham, NC (US);
David Todd Emerson, Durham, NC (US);
Kevin Haberern, Cary, NC (US);
Michael John Bergmann, Chapel Hill, NC (US);
David B. Slater, Jr., Raleigh, NC (US);
Matthew Donofrio, Raleigh, NC (US);
John Edmond, Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.