The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Sep. 14, 2009
Masao Moriguchi, Osaka, JP;
Tokuo Yoshida, Osaka, JP;
Yuhichi Saitoh, Osaka, JP;
Yasuaki Iwase, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Mayuko Sakamoto, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Tokuo Yoshida, Osaka, JP;
Yuhichi Saitoh, Osaka, JP;
Yasuaki Iwase, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Mayuko Sakamoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor deviceaccording to the present invention includes an active layersupported on a substrateand having two channel regions, a source region, a drain region, and an intermediate regionformed between the two channel regions; a contact layerhaving a source contact region, a drain contact region, and an intermediate contact region; a source electrode; a drain electrode; an intermediate electrode; and a gate electrodefacing the two channel regions and the intermediate region through a gate insulating filminterposed therebetween. An entire portion of the intermediate electrodethat is located between the first channel regionand the second channel regionoverlaps the gate electrodethrough the intermediate regionand the gate insulating film