The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Feb. 18, 2008
Applicants:
Masafumi Sano, Yokohama, JP;
Ryo Hayashi, Yokohama, JP;
Inventors:
Masafumi Sano, Yokohama, JP;
Ryo Hayashi, Yokohama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a process for fabricating a thin-film transistor in which a gate electrodeis to be formed on a substrate, the process has the steps of forming the gate electrodeon the substrate, forming a metal oxide layerin such a way as to cover the gate electrode, forming a source electrodeand a drain electrode, and carrying out annealing in an inert gas to change part of the metal oxide layerinto a channel region.