The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Jan. 08, 2010
Applicants:

Jin-seong Park, Yongin, KR;

Yeon-gon MO, Yongin, KR;

Jae-kyeong Jeong, Yongin, KR;

Min-kyu Kim, Yongin, KR;

Hyun-joong Chung, Yongin, KR;

Tae-kyung Ahn, Yongin, KR;

Inventors:

Jin-Seong Park, Yongin, KR;

Yeon-Gon Mo, Yongin, KR;

Jae-Kyeong Jeong, Yongin, KR;

Min-Kyu Kim, Yongin, KR;

Hyun-Joong Chung, Yongin, KR;

Tae-Kyung Ahn, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Giheung-Gu, Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/56 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.


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