The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8435880 B1

PDF
Full Text
Expired
Date of Patent:
May. 07, 2013

Filed:

Oct. 18, 2010
Applicants:

Akira Ohmae, Kanagawa, JP;

Kota Tokuda, Kanagawa, JP;

Masayuki Arimochi, Kanagawa, JP;

Nobuhiro Suzuki, Miyagi, JP;

Michinori Shiomi, Kanagawa, JP;

Tomonori Hino, Tokyo, JP;

Katsunori Yanashima, Kanagawa, JP;

Inventors:

Akira Ohmae, Kanagawa, JP;

Kota Tokuda, Kanagawa, JP;

Masayuki Arimochi, Kanagawa, JP;

Nobuhiro Suzuki, Miyagi, JP;

Michinori Shiomi, Kanagawa, JP;

Tomonori Hino, Tokyo, JP;

Katsunori Yanashima, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.


Find Patent Forward Citations

Ohmae, Akira. (2013). Method for manufacturing semiconductor device and semiconductor device (U.S. Patent No. 8435880). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8435880

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