The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Oct. 18, 2010
Akira Ohmae, Kanagawa, JP;
Kota Tokuda, Kanagawa, JP;
Masayuki Arimochi, Kanagawa, JP;
Nobuhiro Suzuki, Miyagi, JP;
Michinori Shiomi, Kanagawa, JP;
Tomonori Hino, Tokyo, JP;
Katsunori Yanashima, Kanagawa, JP;
Akira Ohmae, Kanagawa, JP;
Kota Tokuda, Kanagawa, JP;
Masayuki Arimochi, Kanagawa, JP;
Nobuhiro Suzuki, Miyagi, JP;
Michinori Shiomi, Kanagawa, JP;
Tomonori Hino, Tokyo, JP;
Katsunori Yanashima, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.