The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jan. 23, 2008
Scott Warrick, Austin, TX (US);
Massud Abubaker Aminpur, Crolles, FR;
Will Conley, Montbonnot-St Martin, FR;
Lionel Riviere-cazeaux, Austin, TX (US);
Scott Warrick, Austin, TX (US);
Massud Abubaker Aminpur, Crolles, FR;
Will Conley, Montbonnot-St Martin, FR;
Lionel Riviere-Cazeaux, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer.