The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Aug. 25, 2010
Applicants:

Misao Hironaka, Tokyo, JP;

Harumi Nishiguchi, Tokyo, JP;

Kyosuke Kuramoto, Tokyo, JP;

Masatsugu Kusunoki, Tokyo, JP;

Inventors:

Misao Hironaka, Tokyo, JP;

Harumi Nishiguchi, Tokyo, JP;

Kyosuke Kuramoto, Tokyo, JP;

Masatsugu Kusunoki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.


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