The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Dec. 01, 2010
Applicants:

Junichi Ariyoshi, Yokohama, JP;

Kazutaka Yoshizawa, Yokohama, JP;

Inventors:

Junichi Ariyoshi, Yokohama, JP;

Kazutaka Yoshizawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device includes oxidizing a surface of a semiconductor substrate to form a first insulating film covering a first area, a second area, and a third area of the semiconductor substrate; removing the portions of the first insulating film lying on the first area and the second area; oxidizing the surface of the semiconductor substrate to form a second insulating film covering the first area and the second area and further oxidizing the third area covered with the first insulating film; and removing the portion of the second insulating film lying on from the second area and the portion of the first insulating film lying on the third area.


Find Patent Forward Citations

Loading…