The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Jan. 29, 2010
Applicants:

Kang-uk Kim, Seoul, KR;

Yong-chul OH, Suwon-si, KR;

Inventors:

Kang-Uk Kim, Seoul, KR;

Yong-Chul Oh, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device, the method including providing a substrate, the substrate including single crystalline silicon and having the first region and a second region; growing a pillar from a top surface of the substrate in the first region; forming a vertical channel transistor including a first gate structure such that first gate structure surrounds a central portion of the pillar; and forming a second transistor on the second region of the substrate such that the second transistor includes a second gate structure.


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