The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jan. 13, 2011
Hironori Yamamoto, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Jun Kawahara, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
Hironori Yamamoto, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Jun Kawahara, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Koichi Ohto, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.