The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8435821 B1

PDF
Full Text
Expired
Date of Patent:
May. 07, 2013

Filed:

Jun. 18, 2010
Applicants:

Sisira Kankanam Gamage, Palo Alto, CA (US);

Naresh Venkata Mantravadi, San Jose, CA (US);

Michael Klitzke, Nevada City, CA (US);

Terry Lee Cookson, Hayward, CA (US);

Inventors:

Sisira Kankanam Gamage, Palo Alto, CA (US);

Naresh Venkata Mantravadi, San Jose, CA (US);

Michael Klitzke, Nevada City, CA (US);

Terry Lee Cookson, Hayward, CA (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element to measure absolute pressure. Interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.


Find Patent Forward Citations

Gamage, Sisira. (2013). Sensor and method for fabricating the same (U.S. Patent No. 8435821). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8435821

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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