The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

Mar. 08, 2010
Applicants:

Maki Sugai, Tokyo, JP;

Shinji Saito, Kanagawa-ken, JP;

Rei Hashimoto, Tokyo, JP;

Yasushi Hattori, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Inventors:

Maki Sugai, Tokyo, JP;

Shinji Saito, Kanagawa-ken, JP;

Rei Hashimoto, Tokyo, JP;

Yasushi Hattori, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion


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