The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Dec. 05, 2008
Applicant:
Masashi Kubota, Kyoto, JP;
Inventor:
Masashi Kubota, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of AlInGaN (x1≧0.5, y1≧0 and 1−x1−y1≦0.5) in a group III nitride semiconductor multilayer structure having a major growth surface defined by a nonpolar plane. A cavity direction of the laser diode is perpendicular to a c-axis. The major growth surface of the group III nitride semiconductor multilayer structure may be defined by an m-plane. In this case, the cavity direction may be along an a-axis.