The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

May. 24, 2011
Applicants:

Chang-min Jeong, Yongin-si, KR;

Hee-seog Jeon, Suwon-si, KR;

Hyun-khe Yoo, Suwon-si, KR;

Ji-do Ryu, Suwon-si, KR;

Inventors:

Chang-Min Jeong, Yongin-si, KR;

Hee-Seog Jeon, Suwon-si, KR;

Hyun-Khe Yoo, Suwon-si, KR;

Ji-Do Ryu, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory cell array, comprising sector selection transistors controlled by a voltage applied to sector selection lines, first through fourth memory cells connected in series to the sector selection transistors, a first common source line connected between the first memory cell and the second memory cell, and a second common source line connected between the third memory cell and the fourth memory cell and separated from the first common source line. A first voltage is applied to the first common source line, and a second voltage different from the first voltage is applied to the second common source line.


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