The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Jun. 22, 2011
Nobuyoshi Awaya, Osaka, JP;
Yukio Tamai, Osaka, JP;
Akihito Sawa, Tsukuba, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A memory cell array having a 1R structure is composed of nonvolatile variable resistive elements each including a variable resistor formed of a metal oxide film whose resistance changes depending on an oxygen concentration in the film, and first and second electrodes sandwiching the variable resistor. The first electrode and the variable resistor form a rectifier junction through a rectifier junction layer composed of an oxide layer and a layer (oxygen depletion layer) of the metal oxide film having an oxygen concentration lower than a stoichiometric composition. The oxygen moves between the first electrode and the metal oxide film when a voltage is applied, and a thickness of the oxygen depletion layer changes, so that the resistance of the metal oxide film changes and the rectifying properties are provided. A thickness of the oxygen depletion layer is set to allow the variable resistive element to show the sufficient rectifying properties.