The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

Jan. 20, 2010
Applicants:

Robert Rex Rice, Simi Valley, CA (US);

Derek Evan Schulte, Playa Del Rey, CA (US);

Elizabeth Twyford Kunkee, Manhattan Beach, CA (US);

Inventors:

Robert Rex Rice, Simi Valley, CA (US);

Derek Evan Schulte, Playa Del Rey, CA (US);

Elizabeth Twyford Kunkee, Manhattan Beach, CA (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 3/05 (2006.01);
U.S. Cl.
CPC ...
Abstract

An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.


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