The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

Mar. 22, 2010
Applicants:

Bum Ki Moon, LaGrangeville, NY (US);

Danny Pak-chum Shum, Poughkeepsie, NY (US);

Moosung Chae, Poughkeepsie, NY (US);

Inventors:

Bum Ki Moon, LaGrangeville, NY (US);

Danny Pak-Chum Shum, Poughkeepsie, NY (US);

Moosung Chae, Poughkeepsie, NY (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/54 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming a barrier layer. The method of forming the barrier layer includes providing a workpiece, forming a first material layer over the workpiece, the first material layer comprising a nitride-based metal compound. A second material layer is formed over the first material layer. The second material layer comprises Ta or Ti. The barrier layer comprises the first material layer and at least the second material layer.


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