The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
May. 10, 2007
Ju-hwan Jung, Yongin-si, KR;
Hyoung-soo Ko, Yongin-si, KR;
Hong-sik Park, Yongin-si, KR;
Yong-su Kim, Yongin-si, KR;
Seung-bum Hong, Yongin-si, KR;
Ju-hwan Jung, Yongin-si, KR;
Hyoung-soo Ko, Yongin-si, KR;
Hong-sik Park, Yongin-si, KR;
Yong-su Kim, Yongin-si, KR;
Seung-bum Hong, Yongin-si, KR;
Seagate Technology LLC, Cupertino, CA (US);
Abstract
Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.