The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Mar. 15, 2010
Keitaro Sakamoto, Otsu, JP;
Fumiyasu Nomura, Otsu, JP;
Tsunenori Komori, Otsu, JP;
Toray Industries, Inc., Tokyo, JP;
Abstract
Disclosed is a plasma processing apparatus, wherein a plasma-generating electrode has a plurality of gas exhaust holes which run through the plasma-generating electrode from the surface facing a substrate held by a substrate-holding mechanism, and reach a gas exhaust chamber; gas-feeding pipes, provided connected to a gas-introducing pipe, have gas-feeding ports for discharging source gas toward the inside of the plurality of gas exhaust holes; and the gas-feeding pipes and the gas-feeding ports are arranged in a manner such that extended lines, representing the direction of the flow of the source gas discharged from the gas-feeding ports, intersect the end surface open regions at the interface of the gas exhaust chamber to the gas exhaust holes. Also disclosed is a method of producing the amorphous silicon thin film using the plasma processing apparatus.