The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Dec. 30, 2009
Woong Lee, Seoul, KR;
Jung-yoon Ko, Seoul, KR;
Sang-kyoung Lee, Seoul, KR;
Ho-min Son, Suwon-si, KR;
Won-jun Jang, Seoul, KR;
Jung-geun Jee, Seoul, KR;
Woong Lee, Seoul, KR;
Jung-Yoon Ko, Seoul, KR;
Sang-Kyoung Lee, Seoul, KR;
Ho-Min Son, Suwon-si, KR;
Won-Jun Jang, Seoul, KR;
Jung-Geun Jee, Seoul, KR;
Abstract
A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.