The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
May. 11, 2009
Philippe Meunier-beillard, Kortenberg, BE;
Erwin Hijzen, Haasrode, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Philippe Meunier-Beillard, Kortenberg, BE;
Erwin Hijzen, Haasrode, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
NXP B.V., Eindhoven, NL;
Abstract
Methods for manufacturing a bipolar transistor semiconductor device are described, along with devices fabricated in accordance with the methods. The methods include the steps of forming a stack of layers over a semiconductor body comprising a window definition layer (), a layer () of semiconductor material, a first insulating layer (), and a second insulating layer () which is selectively etchable with respect to the first insulating layer. A trench () is then etched into the stack down to the window definition layer. The portion of the trench extending through the second insulating layer is widened to form a wider trench portion () therethrough. A window () is defined in the window definition layer which is aligned with the wider trench portion, and serves to define the base-collector or base-emitter junction in the finished device.