The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Dec. 20, 2011
Applicants:
Hiroshi Yamamoto, Tokyo, JP;
Mitsuru Yoshikawa, Tokyo, JP;
Inventors:
Hiroshi Yamamoto, Tokyo, JP;
Mitsuru Yoshikawa, Tokyo, JP;
Assignee:
MagnaChip Semiconductor, Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a substrate having a trench that defines an active region, an isolation layer that buries the trench, a pro-oxidant region formed at an upper corner portion of the trench to enhance oxidation at the upper corner portion of the trench when a gate insulation layer is grown on the active region, and a gate conductive layer formed on the gate insulation layer.