The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

Dec. 28, 2007
Applicants:

Katsunari Obata, Tokyo, JP;

Takuya Hata, Saitama, JP;

Kenji Nakamura, Saitama, JP;

Hiroyuki Endoh, Tokyo, JP;

Inventors:

Katsunari Obata, Tokyo, JP;

Takuya Hata, Saitama, JP;

Kenji Nakamura, Saitama, JP;

Hiroyuki Endoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant.


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