The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

Jan. 22, 2009
Applicants:

Anthony K. Burrell, Los Alamos, NM (US);

Thomas Mark Mccleskey, Los Alamos, NM (US);

Quanxi Jia, Los Alamos, NM (US);

Alexander H. Mueller, Santa Fe, NM (US);

Hongmei Luo, Los Alamos, NM (US);

Inventors:

Anthony K. Burrell, Los Alamos, NM (US);

Thomas Mark McCleskey, Los Alamos, NM (US);

Quanxi Jia, Los Alamos, NM (US);

Alexander H. Mueller, Santa Fe, NM (US);

Hongmei Luo, Los Alamos, NM (US);

Assignee:

Los Alamos National Security, LLC, Los Alamos, NM (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 13/04 (2006.01); B32B 15/04 (2006.01); B32B 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.


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