The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2013

Filed:

Sep. 30, 2011
Applicants:

Ravi K. Kummaraguntla, Austin, TX (US);

Ruifeng Sun, Austin, TX (US);

Inventors:

Ravi K. Kummaraguntla, Austin, TX (US);

Ruifeng Sun, Austin, TX (US);

Assignee:

Silicon Laboratories Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 7/00 (2006.01); H03K 5/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques are disclosed relating to radio frequency (RF) power detection. In one embodiment, a power detection unit is disclosed that includes a multiplier circuit configured to receive a first voltage of a voltage differential signal at gates of a first transistor pair and a second voltage of the voltage differential signal at gates of a second transistor pair. The first multiplier is configured to output a current that varies proportionally to a square of a voltage difference between the first and second voltages. In some embodiments, sources of the first transistor pair are coupled to sources of the second transistor pair, and the sources of the second transistor pair are coupled together. In some embodiments, the power detection unit is configured to compensate for mismatched transistors by applying offset voltages to bodies of transistors in the first and second transistor pairs.


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