The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Apr. 05, 2012
Akio Shima, Hino, JP;
Yoshitaka Sasago, Tachikawa, JP;
Masaharu Kinoshita, Kokubunji, JP;
Toshiyuki Mine, Fussa, JP;
Norikatsu Takaura, Tokyo, JP;
Takahiro Morikawa, Hachioji, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Satoru Hanzawa, Hachioji, JP;
Akio Shima, Hino, JP;
Yoshitaka Sasago, Tachikawa, JP;
Masaharu Kinoshita, Kokubunji, JP;
Toshiyuki Mine, Fussa, JP;
Norikatsu Takaura, Tokyo, JP;
Takahiro Morikawa, Hachioji, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Satoru Hanzawa, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and connected between source and drain terminals of the transistor are arranged longitudinally and in an array to configure a three-dimensional memory cell array. A memory cell structure has a double channel structure in which an inside of a switching transistor is filled with a variable resistance element, particularly, a phase change material. The switching transistor is turned off by application of a voltage to increase a channel resistance so that a current flows in the internal phase change material to operate the memory.