The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Nov. 04, 2009
Kwangmin Park, Seoul, KR;
Juwan Lim, Seoul, KR;
Seungjae Baik, Hwaseong-si, KR;
Siyoung Choi, Seongnam-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Juyul Lee, Seoul, KR;
Kwangmin Park, Seoul, KR;
Juwan Lim, Seoul, KR;
Seungjae Baik, Hwaseong-si, KR;
Siyoung Choi, Seongnam-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Juyul Lee, Seoul, KR;
Abstract
A charge trap nonvolatile memory device includes a gate electrode on a substrate; a charge trapping layer between the substrate and the gate electrode; a charge tunneling layer between the charge trapping layer and the substrate; and a charge blocking layer between the gate electrode and the charge trapping layer. The charge trapping layer includes a first charge trapping layer having a first energy band gap and a second charge trapping layer having a second energy band gap that is different than the first energy band gap. The first and second charge trapping layers are repeatedly stacked and the first and second energy band gaps are smaller than energy band gaps of the charge tunneling layer and the charge blocking layer.