The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
May. 27, 2009
Chang Geun Ahn, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
IN Bok Baek, Cheongju-si, KR;
Chil Seong Ah, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Gun Yong Sung, Daejeon, KR;
Chang Geun Ahn, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
In Bok Baek, Cheongju-si, KR;
Chil Seong Ah, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Gun Yong Sung, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a sensing device, which includes a reactive material layer () responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (), the first electrode being disposed under the reactive material layer (), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer () is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.