The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
May. 10, 2010
Tetsuya Ikuta, Chiyoda-ku, JP;
JO Shimizu, Chiyoda-ku, JP;
Tomohiko Shibata, Chiyoda-ku, JP;
Ryo Sakamoto, Chiyoda-ku, JP;
Tsuneo Ito, Chiyoda-ku, JP;
Tetsuya Ikuta, Chiyoda-ku, JP;
Jo Shimizu, Chiyoda-ku, JP;
Tomohiko Shibata, Chiyoda-ku, JP;
Ryo Sakamoto, Chiyoda-ku, JP;
Tsuneo Ito, Chiyoda-ku, JP;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a BAlGaInN material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a BAlGaInN material and a second layer made of a BAlGaInN material having a different band gap from the first layer.